Researchers at Oak Ridge National Laboratory (ORNL) and the University of Tennessee, Knoxville, have developed a method to directly visualize and analyze the atomic structures of moiré materials. These 2D materials, which exhibit unique properties when layered at specific angles, have potential applications in quantum computing and advanced electronics.
As per the Oak Ridge National Laboratory release, the team, led by ORNL scientist Sumner Harris, used a neural network-based approach called Gomb-Net to locate dopant atoms within the moiré patterns. Their analysis found that the position of atoms in the moiré pattern does not affect the ease of atom substitution, challenging previous theoretical models.
Gomb-Net can run on standard personal computers, enabling real-time analysis for electron microscopes. In the study, researchers doped a twisted stack of tungsten disulfide monolayers with selenium to examine distribution within the moiré patterns, aiming to modify electronic and optical properties.
The research, published in Nano Letters and funded by the DOE Basic Energy Sciences program, may contribute to more efficient semiconductors, lasers, LED lighting, and quantum computing devices.
